An Elastically Gimbaled Z-Axis CMOS-MEMS Gyroscope
نویسندگان
چکیده
This paper presents a vertical (Z-axis) CMOS-MEMS gyroscope with a measured noise floor of 0.03°/sec/ and 1% linearity in the range of -360° /sec to 360°/sec. The gyroscope is fully compatible with conventional CMOS processes, which enable the integration of most of the conditioning circuits. It is fabricated in a three-metal-layer 0.5μm CMOS process followed by a two-step dry etch release. An improved out-of-plane curl matching technique provides the sidewall alignment to 1 μm. A new differential capacitive sensing interface is employed.
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